We are looking for a highly motivated and skilled engineer to join our Medium Voltage (MV) Power Trench MOSFET Team. The successful candidate will play a key role in the design and development of next-generation MV shielded-gate trench MOSFET technologies. This role involves close collaboration with the design, application, and marketing teams, as well as external foundry partners, to drive innovation, optimize performance, and accelerate product industrialization.
Key Responsibilities
- :Define and establish key process modules for next-generation MV shielded-gate trench MOSFET technolog
- ySet up key process modules required for the development of cutting-edge MV shielded-gate trench MOSFET technologie
- sPerform wafer probing and analyze assembled product performance data for each development cycl
- eAnalyze wafer-level electrical test results and package-level performance data for each development iteratio
- nSupport derivative technology development based on proven technology platform
- sLead yield improvement activities and support technology transfer to mass productio
- nContribute to the development of derivative products based on established and mature technology platform
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Qualificatio
- nsPh.D. (preferred) or M.S. in Electrical Engineering, Physics, or a related fie
- ldUp to 15 years of experience in power semiconductor device or process development, preferably with a focus on Si-based MV shielded-gate trench MOSFE
- TsSolid understanding of power device physics and semiconductor fabrication process
- esHands-on experience with TCAD tools and simulation-based device analys
- isIntermediate-level proficiency in both written and spoken English and Japane
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