Power Development Intern (Jan - Jun 2027)

About GlobalFoundries

GlobalFoundries(GF)is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world's most inspired technology companies. With a global manufacturing footprint spanning three continents,GFmakes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit.

Internship Program Overview:

Our Interns & Co-ops are our entry-level talent pipeline for GF across the globe. Our goal is to provide students withmeaningfulwork experience that will equip them with the skills to embark on a career in the fast-paced and growing semiconductor industry after graduation. As an intern at GF,you'llexperience one-on-one mentorship, work assignments that prioritize your growth and potential, professional development opportunities, and the chance to network with executives.

Summary of Role:

We are looking for a motivated, hardworking, team-oriented person who can fit into our technology development team focusing on semiconductor memory device development, with emphasis on Resistive RAM (RRAM). The candidate is expected to leverage a strong academic foundation in device physics, microelectronics, materials science, or electrical engineering to contribute to ongoing RRAM technology development. You will be part of a team of engineers with specific capabilities who will provide training on different tools and methods.

Essential Responsibilities include:

• Participate in RRAM device characterization and electrical testing to understand memory cell behavior, switching characteristics, and reliability performance.

• Analyze electrical test data from RRAM cells and arrays, including forming, set/reset, resistance window, leakage, cycling, retention, and distribution trends.

• Support development of RRAM test methodologies, data analysis flows, and statistical summaries to help guide design-of-experiment decisions and technology optimization.

• Contribute to failure analysis and root-cause studies by correlating process, device, and electrical data to identify potential improvement actions.

• Assist in evaluating RRAM stack/process options and proposing improvement actions to enhance device performance, reliability, and manufacturability.

Other Responsibilities:

• Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Securityrequirementsand programs.

Required Qualifications:

• Education-Actively pursuing aBachelorsdegree in Physics, Materials Science, Electrical & Electronics Engineering, Microelectronics, or a related field with basic understanding of semiconductors and device physics.

• Mustbe ingood academic standing.

• Ability to workat least40hoursper week during the internship.

• Available for a 16-24 weekcredit-bearing internshipcommencingJanuary 2027.

Preferred Qualifications:

• Prior related internship or co-op experience

• Demonstrated prior leadership experience in the workplace, school projects, competitions, etc.

• Project management skills,i.e.,the ability to innovate andexecutesolutions that matter the ability to navigate ambiguity.

• Interest in semiconductor devices, CMOS technology, non-volatile memory, RRAM, wafer fabrication processes, and device characterization.

• Data analysis and programming capability. Knowledge of Python, MATLAB, JMP, Excel, or another programming/data-analysis tool will be useful.

• Ability to work with technical data, summarize findings clearly, and communicate progress on a regular basis.

.Pleaseindicateyour internship period clearly in your CV / resume / cover letter.

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